MDL-E-660

MDL-E-660 — 660 nm Red Diode Laser for Optical Metrology. 660 nm wavelength; output options above 1 mW to 120 mW; RMS power stability below 3%, 2% or 1%.. Applications: High-resolution spectral analysis and Red-light optical sensing.

Datasheet

Technical Specifications

Wavelength660±1 nm
Beam Diameter At The Aperture (mm,1/e²)~1.3 mm (1/e²)
Output Power1-80 mW
Spectral Linewidth<0.06, <0.03 nm
Beam Divergence (mrad)<1.5 mrad
Frequency Shift<20 pm (over ± 2°C and 2hrs)
Beam Height From Base Plate (mm)30 mm
M²<1.5
Polarization>50:1, (>100:1 optional) Horizontal±5 degree (Vertical optional)
Transverse ModeNeartem00
Operating ModeCW
Operating Temperature (℃)20-30 °C
Expected Life Time (hours)>10000 hours
Power Stability (RMS)<3%, <2%, <1%
Warm-up Time (minutes)<5 minutes
Cooling MethodConduction
Power Supply (110/220VAC)PSU-A-D

Description

MDL-E-660 — 660 nm Red Diode Laser for Optical Metrology. A red-wavelength diode source supplying selectable power for scientific spectroscopy and optical measurement.

Key Specifications: 660 nm wavelength; output options above 1 mW to 120 mW; RMS power stability below 3%, 2% or 1%.

Potential Applications:

  • High-resolution spectral analysis
  • Red-light optical sensing
  • Precision laser measurement
  • Photonic instrument calibration
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