Description
Intracavity Q-switching devices with high damage threshold and high modulation loss
The Acousto-optic Q-switches (AOQS) are a type of Q-switch designed for laser Q-switching applications. At the beginning of pumping, the AOQS increases the diffraction loss in the cavity, causing the cavity to be in a low Q-value state, which increases the oscillation threshold and prevents oscillation from occurring. This allows a large number of inverted particles in the upper energy level to accumulate. When the accumulation reaches saturation, suddenly removing the diffraction loss causes the cavity loss to decrease and the Q-value to suddenly increase, rapidly establishing laser oscillation. In a very short period of time, the inverted particles in the upper energy level are consumed and converted into optical energy in the cavity, resulting in high-peak-power giant pulse laser output.
We can provide a variety of A-O Q-switches with operating wavelength ranges covering 310 nm-10.6 um. Our products have high transmittance (single pass transmittance up to 99.6%), fast switching speed, strong shut-off capability, high damage threshold, and excellent pulse stability. To achieve higher diffraction efficiency, large-aperture A-O Q-switches require higher RF power injection. Therefore, water cooling is needed to ensure proper heat dissipation of the device.
Applications：
●Laser marking
●Medical procedure
●Material processing
| Model Number：CAQS-f-a-mt-w-c-h | ||||||
| Center Frequency (f) | Aperture (a) | Material (m) | Mode (t) | Wavelength (w) | RF Connector (c) | Housing (h) |
| 041 (40.68 MHz)
… |
010 (1 mm）
… |
CQ
TE |
C (Compressional)
… |
266 (266nm)
… |
AF (SMA-F)
… |
A01
… |
| Typical Specifications | ||||
| Wavelength | Aperture | Operation frequency | Loss modulation | Material |
| 1030-1064 nm | 1-6 mm | 24, 27.12, 40.68, 68, 80 MHz | ＞85 % | FS |
| 1030-1064 nm | 1-3 mm | 40.68, 68, 80, 100 MHz | ＞85 % | CQ |
| 1319-1342 nm | 1 mm | 80 MHz | ＞85 % | CQ |
| 1550 nm | 1 mm | 80 MHz | ＞85 % | CQ |
| 1900-2100 nm | 4 mm | 40.68 MHz | ≥75 % | CQ |
| 9.4-10.6 μm | 11.6 mm | 40.68 MHz | ≥85 % | / |
| *Damage threshold ＞1.0 GW/cm² @ 1064 nm, 10 ns，10 Hz | ||||
