Description
830nm, 830 nm, 830±10 nm, Diode Laser, Nanosecond Laser
MDL-NS-830
830nm, 830 nm, 830±10 nm, Diode Laser, Nanosecond Laser
Additional information
| Beam Diameter At The Aperture (mm,1/e²) | ~3.0 |
|---|---|
| Beam Divergence (mrad) | <1.0 |
| Beam Height From Base Plate (mm) | 19 |
| Central WL | |
| Expected Lifetime (hours) | 10000 |
| Fall Time | <3 ns |
| Input Voltage | +12VDC |
| Laser OEM | CNI laser |
| Laser Tags | Diode Laser, Nanosecond Laser |
| Modulation Depth (extinction ratio) | >1000000:1 |
| M² | <1.5 |
| Noise (RMS, 20Hz~20MHz) | <1% |
| Operating Temperature (℃) | 10~35 |
| Output Power | >1, 10, 20, …,120 mW (adjustable) |
| Power Stability (RMS) | <3%, <2%, <1% |
| Pulse Width | >10ns, 20ns, …,10ms |
| Rise Time (ns) | <3 |
| Transverse Mode | Near TEM00 |
| User Trigger Frequency (Multifunctional Pulse Trigger optional) | 1Hz-20MHz(1Hz-20MHz by using CNI Multifunctional Pulse Trigger) |
| Warm-up Time (minutes) | <5 |
| Warranty | 1 year |
| Wavelength | 830±10 nm |
